PART |
Description |
Maker |
2N3651 2N3652 2N3650 2N3653 |
35A silicon controlled rectifier. Vrsom 300V. 35A silicon controlled rectifier. Vrsom 400V. 35A silicon controlled rectifier. Vrsom 150V. 35A silicon controlled rectifier. Vrsom 500V.
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General Electric Solid State
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2N640004 2N6401G 2N6426G 2N6405G 2N6400 2N6401 2N6 |
Silicon Controlled Rectifier 16A 400V Darlington Transistors NPN Silicon Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS
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ONSEMI[ON Semiconductor]
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IRKLF102-08HJ IRKLF112-08HN IRKLF102-06HK IRKLF102 |
164.85 A, 800 V, SCR Silicon Controlled Rectifier, 250 A, 800 V, SCR, POWER, INT-A-PAK-5 Silicon Controlled Rectifier, 164.85 A, 600 V, SCR Silicon Controlled Rectifier, 164.85 A, 1200 V, SCR
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Vishay Semiconductors
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NTE5513 NTE5511 NTE5512 |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A. Silicon Controlled Rectifier (SCR) 5 Amp
|
NTE[NTE Electronics]
|
MCR310-010 MCR310-D |
Silicon Controlled Rectifier 10A 800V Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
|
ON Semiconductor
|
S4060 S4060M S4060D S4060U |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 25V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 400V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 600V. 10 AMPERE SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
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General Electric Solid State ETC[ETC]
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NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A. Silicon Controlled Rectifiers Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
55C07 55C80BF 55C120B 55C100B 55C100BF |
Silicon Controlled Rectifier 86 A, SCR, TO-208AD Silicon Controlled Rectifier
|
Microsemi Corporation MICROSEMI CORP-LAWRENCE
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CPA80A12AA4-12FC CPAT45A12AA4-12FC CPA250V2AA4-12F |
SILICON CONTROLLED SWITCH ADD-A-PAK 3 PHASE, 400 A, SILICON, RECTIFIER DIODE SCR 3 PHASE, 1000 A, SILICON, RECTIFIER DIODE
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BY527 BY527_1 |
Controlled avalanche rectifier(控制的雪崩整流器) SILICON, RECTIFIER DIODE From old datasheet system
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
MCR100-8G MCR100-4G MCR100-004G |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors 0.8 A, 200 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifier; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000
|
On Semiconductor
|
CS220-25N CS220-25B CS220-25D CS220-25M |
Leaded Thyristor SCR SILICON CONTROLLED RECTIFIER 25 AMP, 200 THRU 800 VOLTS 25 A, 200 V, SCR, TO-220AB SILICON CONTROLLED RECTIFIER 25 AMP, 200 THRU 800 VOLTS 25 A, 800 V, SCR, TO-220AB SILICON CONTROLLED RECTIFIER 25 AMP, 200 THRU 800 VOLTS 25 A, 600 V, SCR, TO-220AB
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CENTRAL[Central Semiconductor Corp] Central Semiconductor, Corp.
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